Title :
Heavy Ion, High-Energy, and Low-Energy Proton SEE Sensitivity of 90-nm RHBD SRAMs
Author :
Cannon, E.H. ; Cabanas-Holmen, M. ; Wert, J. ; Amort, T. ; Brees, R. ; Koehn, J. ; Meaker, B. ; Normand, E.
Author_Institution :
Boeing Co., Seattle, WA, USA
Abstract :
We measure the sensitivity of different 90-nm SRAM cells to single-event upsets (SEUs) caused by heavy ions, high energy protons, and low energy protons. We discuss radiation hardened by design techniques that impact SEU sensitivity.
Keywords :
SRAM chips; integrated circuit design; radiation effects; RHBD SRAM; SEE sensitivity; SEU sensitivity; design techniques; direct ionization; high-energy proton; low-energy proton; proton radiation effects; single-event upsets; Ionization; Proton radiation effects; Radiation effects; Radiation hardening; Single event upset; Direct ionization; proton radiation effects; radiation effects; single event upset; single-event effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2086482
