DocumentCode :
1394780
Title :
Impact of NBTI Aging on the Single-Event Upset of SRAM Cells
Author :
Bagatin, Marta ; Gerardin, Simone ; Paccagnella, Alessandro ; Faccio, Federico
Author_Institution :
Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy
Volume :
57
Issue :
6
fYear :
2010
Firstpage :
3245
Lastpage :
3250
Abstract :
We analyzed the impact of negative bias temperature instability (NBTI) on the single-event upset rate of SRAM cells through experiments and SPICE simulations. We performed critical charge simulations introducing different degradation patterns in the cells, in three technology nodes, from 180 to 90 nm. The simulations results were checked with α-particle and heavy-ion irradiations on a 130-nm technology. Both simulations and experimental results show that NBTI degradation does not significantly affect the single-event upset SRAM cell rate as long as the parametric drift induced by aging is within 10%.
Keywords :
SRAM chips; alpha-particle effects; ion beam effects; NBTI aging; SPICE simulations; SRAM cell rate; alpha-particle irradiation; critical charge simulations; degradation patterns; heavy-ion irradiation; negative bias temperature instability; parametric drift; single-event upset; size 180 nm to 190 nm; Ions; Negative bias temperature instability; Radiation effects; SRAM chips; Single event upset; Electrical stress; SRAMs; heavy ions; negative bias temperature instability (NBTI); radiation effects; single-event upset (SEU);
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2010.2084100
Filename :
5658057
Link To Document :
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