Radiation induced trap levels in SIMOX oxides: low temperature thermally stimulated luminescence

Author

Martini, M. ; Meinardi, F. ; Rosetta, E. ; Spinolo, G. ; Vedda, A. ; Leray, J.L. ; Paillet, P. ; Autran, J.L. ; Devine, R.A.B.

Author_Institution

Dipt. di Sci. dei Mater., Milan Univ., Italy

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

1396

Lastpage

1401

Abstract

Thermally Stimulated Luminescence (TSL) properties of SIMOX oxides, induced by x-irradiation, have been studied in the temperature range 100-400 K. For the first time studied in SIMOX, a series of TSL peaks at 110, 150 and 200 K appear clearly. A continuous distribution of trap levels ranging from 0.4 to 1.1 eV has been found to be responsible for the broad and intense peak observed at 200 K; moreover, the wavelength distribution of the emitted light has revealed the presence of an emission centred at 2.7 eV. A comparison with the TSL properties of synthetic silica is presented, and the results are discussed also in the light of previous characterizations of trap levels obtained by electrical techniques. This study gives new insight concerning the electron and hole traps structures in SIMOX compared to bulk silica

Keywords

SIMOX; X-ray effects; electron traps; hole traps; thermoluminescence; 100 to 400 K; SIMOX oxide; SiO₂; X-irradiation; electron traps; hole traps; radiation induced traps; synthetic silica; thermally stimulated luminescence; Annealing; Area measurement; Argon; Charge carrier processes; Electron traps; Etching; Luminescence; Silicon compounds; Temperature distribution; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.685213

Filename

685213