Title :
Physical characterization of electron trapping in Unibond(R) oxides
Author :
Gruber, Olivier ; Paillet, P. ; Marcandella, C. ; Aspar, B. ; Auberton-Herve, A.J.
Author_Institution :
CEA, Bruyeres-le-Chatel
fDate :
6/1/1998 12:00:00 AM
Abstract :
In this work, we study the trapping properties of Unibond(R) oxides. We measure its radiative response under different irradiation conditions using both point-contact and MOS transistors. The results obtained show both hole and electron trapping, as previously observed in SIMOX. But in the Unibond(R) case, there is a positive shift of the threshold voltage at very high doses. Using a simple model, we explain this shift by considering a second type of electron traps
Keywords :
MOSFET; X-ray effects; electron traps; point contacts; silicon-on-insulator; MOS transistor; SiO2; Unibond oxide; electron trapping; hole trapping; point-contact transistor; radiative response; threshold voltage; Charge measurement; Current measurement; Electron traps; Probes; Semiconductor films; Silicon; Substrates; Testing; Thin film transistors; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
