• DocumentCode
    1394790
  • Title

    Physical characterization of electron trapping in Unibond(R) oxides

  • Author

    Gruber, Olivier ; Paillet, P. ; Marcandella, C. ; Aspar, B. ; Auberton-Herve, A.J.

  • Author_Institution
    CEA, Bruyeres-le-Chatel
  • Volume
    45
  • Issue
    3
  • fYear
    1998
  • fDate
    6/1/1998 12:00:00 AM
  • Firstpage
    1402
  • Lastpage
    1406
  • Abstract
    In this work, we study the trapping properties of Unibond(R) oxides. We measure its radiative response under different irradiation conditions using both point-contact and MOS transistors. The results obtained show both hole and electron trapping, as previously observed in SIMOX. But in the Unibond(R) case, there is a positive shift of the threshold voltage at very high doses. Using a simple model, we explain this shift by considering a second type of electron traps
  • Keywords
    MOSFET; X-ray effects; electron traps; point contacts; silicon-on-insulator; MOS transistor; SiO2; Unibond oxide; electron trapping; hole trapping; point-contact transistor; radiative response; threshold voltage; Charge measurement; Current measurement; Electron traps; Probes; Semiconductor films; Silicon; Substrates; Testing; Thin film transistors; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.685214
  • Filename
    685214
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394790