Title :
Parametric Variability Affecting 45 nm SOI SRAM Single Event Upset Cross-Sections
Author :
Loveless, Thomas Daniel ; Alles, Michael L. ; Ball, Dennis R. ; Warren, Kevin M. ; Massengill, Lloyd W.
Author_Institution :
Inst. of Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA
Abstract :
SEU simulation analyses of a commercial 45 nm CMOS SOI SRAM cell compared to test data highlight the need to better understand and account for variation in inter-cell hardness, and uncertainty in energy deposition in small sensitive volumes. Simulations indicate that operating voltage and body resistance have the largest impact on simulated cell hardness.
Keywords :
CMOS memory circuits; SRAM chips; nuclear electronics; silicon-on-insulator; CMOS SOI SRAM; SEU simulation analysis; intercell hardness; parametric variability; single event upset cross section; CMOS technology; SRAM chips; Silicon on insulator technology; Simulation; Single event upset; CMOS; SRAM; silicon-on-insulator (SOI); simulation; single event upset (SEU);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2081688
