• DocumentCode
    1394820
  • Title

    Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuits

  • Author

    Pease, Ronald L. ; Shaneyfelt, Marty ; Winokur, Peter ; Fleetwood, Dan ; Gorelick, Jerry ; McClure, Steve ; Clark, Steve ; Cohn, Lew ; Alexander, Dave

  • Author_Institution
    RLP Res., Albuquerque, NM, USA
  • Volume
    45
  • Issue
    3
  • fYear
    1998
  • fDate
    6/1/1998 12:00:00 AM
  • Firstpage
    1425
  • Lastpage
    1430
  • Abstract
    The ionizing radiation response of several semiconductor process technologies has been shown to be affected by preirradiation thermal stress. Data on bipolar linear circuits are presented and discussed in terms of the mechanisms previously proposed for CMOS
  • Keywords
    bipolar analogue integrated circuits; gamma-ray effects; thermal stresses; bipolar linear microcircuit; ionizing radiation response; preirradiation thermal stress; semiconductor process technology; total dose sensitivity; CMOS technology; Ceramics; Laboratories; MOSFETs; Plastic packaging; Radiation hardening; Space technology; Temperature; Thermal stresses; Weapons;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.685218
  • Filename
    685218
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394820