Title :
Dose-rate and irradiation temperature dependence of BJT SPICE model rad-parameters
Author :
Montagner, X. ; Briand, R. ; Fouillat, P. ; Schrimpf, R.D. ; Touboui, A. ; Galloway, K.F. ; Calvet, M.C. ; Calvel, P.
Author_Institution :
Lab. IXL, Bordeaux I Univ., Talence, France
fDate :
6/1/1998 12:00:00 AM
Abstract :
A method to predict low dose rate degradation of bipolar transistors using high dose-rate, high temperature irradiation is evaluated, based on an analysis of four new rad-parameters that are introduced in the BJT SPICE model. This improved BJT model describes the radiation-induced excess base current with great accuracy. The low-level values of the rad-parameters are good tools for evaluating the proposed high-temperature test method because of their high sensitivity to radiation-induced degradation
Keywords :
SPICE; bipolar transistors; gamma-ray effects; semiconductor device models; BJT SPICE model; bipolar transistor; dose rate dependence; excess base current; high temperature testing; irradiation temperature dependence; radiation parameters; radiation-induced degradation; Bipolar transistors; Degradation; Ionizing radiation; Microwave transistors; Performance evaluation; SPICE; Telecommunications; Temperature dependence; Temperature sensors; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
