Title :
Charge Collection and SEU in SiGe HBT Current Mode Logic Operating at Cryogenic Temperatures
Author :
Xu, Ziyan ; Niu, Guofu ; Luo, Lan ; Cressler, John D. ; Alles, Michael L. ; Reed, Robert ; Mantooth, H. Alan ; Holmes, James ; Marshall, Paul W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL, USA
Abstract :
This paper investigates cryogenic temperature charge collection and single-event upset (SEU) in SiGe HBT devices and logic circuits using 3-D device simulation and circuit simulation. Cryogenic temperature circuit simulation is enabled by a new SiGe HBT compact model developed for wide temperature range operation. Incomplete ionization was found to impact charge collection below 130 K. With cooling, collector-substrate (CS) junction peak current ICS and integral charge QCS first increase, and then decrease below 130 K. Circuit SEU immunity is found to be nearly independent of temperature above 150 K and improve with further cooling, suggesting no additional hardening is required for cryogenic temperature operation.
Keywords :
Ge-Si alloys; bipolar logic circuits; circuit simulation; cryogenic electronics; current-mode logic; heterojunction bipolar transistors; 3D device simulation; HBT current mode logic; HBT devices; SEU; SiGe; collector-substrate; collector-substrate junction peak current; cryogenic temperature charge collection; cryogenic temperature circuit simulation; integral charge; ionization; logic circuits; single-event upset; wide temperature range operation; Cryogenic electronics; Heterojunction bipolar transistors; Silicon germanium; Single event upset; Charge collection; SiGe HBT; cryogenic temperature; single-event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2085050
