Title :
High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers
Author :
Carrano, J.C. ; Li, T. ; Grudowski, P.A. ; Eiting, C.J. ; Dupuis, R.D. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
11/6/1997 12:00:00 AM
Abstract :
The authors report a GaN metal-semiconductor-metal photodetector with high quantum efficiency (~50%) in the absence of internal gain. These photodetectors have a flat responsivity above the bandgap (measured at ~0.15 A/W) with a sharp, solar blind cutoff at the band edge. There is no discernible responsivity for photons below the bandgap energy. In addition, a very low dark current was obtained, measured at ~800 fA at ~10 V reverse bias
Keywords :
III-V semiconductors; dark conductivity; gallium compounds; metal-semiconductor-metal structures; photodetectors; semiconductor epitaxial layers; ultraviolet detectors; -10 V; 50 percent; 800 fA; GaN; band edge; bandgap; bandgap energy; dark current; flat responsivity; metal-semiconductor-metal photodetectors; quantum efficiency; reverse bias; single-crystal epitaxial layers; solar blind cutoff; ultraviolet photodetectors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971322
