Title :
Strategies for MilliRad sensitivity in PMOS dosimeters
Author :
Conneely, C. ; O´Connell, B. ; Hurley, P. ; Lane, W. ; Adams, L.
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
fDate :
6/1/1998 12:00:00 AM
Abstract :
Previous work at this centre has shown enhanced sensitivity for PMOS dosimeters using a design approach. This is being extended presently to longer chains of devices. Prior to this extension, thermal effects have been investigated and a noise analysis has been undertaken. The need for a temperature compensation technique becomes imperative if the signal/noise ratio is to be improved
Keywords :
MOSFET; compensation; dosimeters; semiconductor device noise; silicon radiation detectors; MilliRad sensitivity; PMOS dosimeter; RADFET; design; signal/noise ratio; temperature compensation; thermal effects; Costs; Implants; Low-frequency noise; Microelectronics; Noise generators; Noise measurement; Packaging; Personnel; Temperature sensors; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
