Title :
GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy
Author :
Guha, Saikat ; Bojarczuk, N.A.
Author_Institution :
Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY
fDate :
11/6/1997 12:00:00 AM
Abstract :
The authors have demonstrated the operation of GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy. Electron injection is achieved through the n type Si substrate and electroluminescence peaks between 500-550 nm in the current injection range of 20-65 A/cm2 at 5-7.5 volts
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; molecular beam epitaxial growth; semiconductor growth; 5 to 7.5 V; 500 to 550 nm; GaN based LED; GaN-Si; MBE; Si; Si(111); electroluminescence; electron injection; light emitting diodes; molecular beam epitaxy; n-type Si substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971312
