Title :
Photon emission in deep submicron Si n-MOSFET
Author :
Szelag, B. ; Balestra, F.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble
fDate :
11/6/1997 12:00:00 AM
Abstract :
The photon emission phenomenon has been studied in deep submicron MOSFETs (down to 0.1 μm) in a wide drain and substrate voltage range. The authors show that the number of emitted photon is still large for low voltage operation. Moreover, using the influence of a substrate bias, it is shown that the photon emission phenomenon is unambiguously associated with the substrate current and cannot be correlated to the gate current
Keywords :
MOSFET; electroluminescence; elemental semiconductors; silicon; 0.1 micron; NMOSFET; Si; Si n-MOSFET; deep submicron MOSFETs; low voltage operation; photon emission phenomenon; substrate bias; substrate current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971304
