Title :
Scalable RF Si MOSFET distributed lumped element model based on BSIM3v3
Author :
Ho, M.C. ; Brauchler, F. ; Yang, J.Y.
Author_Institution :
Corp. Res. & Dev., Texas Instrum. Inc., Dallas, TX, USA
fDate :
11/6/1997 12:00:00 AM
Abstract :
A scalable distributed lumped element network model for Si MOSFETs is developed for RF power amplifier design. The model is based on BSIM3v3 developed by UC Berkeley and lossy transmission lines; S-parameter measurement up to 6 GHz and power measurement at 900 MHz are used for model validation
Keywords :
S-parameters; UHF field effect transistors; distributed parameter networks; elemental semiconductors; equivalent circuits; lumped parameter networks; microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device models; silicon; 900 MHz to 6 GHz; BSIM3v3; RF MOSFET; RF power amplifier design; RF power characteristics; S-parameter measurement; SHF; Si; UHF; distributed lumped element model; lossy transmission lines; model validation; power measurement; scalable MOSFET model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971316
