Title :
In vacuo responses of an AlGaAs vertical cavity surface emitting laser irradiated by 4.5 MeV protons
Author :
Taylor, E.W. ; Paxton, A.H. ; Schone, H. ; Carson, R.F. ; Bristow, J. ; Lehman, J.A. ; Hibbs-Brenner, M.K. ; Morgan, R.A. ; Marta, T.
Author_Institution :
Phillips Lab., US Air Force, Kirtland AFB, NM, USA
fDate :
6/1/1998 12:00:00 AM
Abstract :
Vertical cavity surface emitting lasers (VCSELs) have high potential for space applications, yet little is known of their sensitivity to radiation under vacuum conditions. The first observations of a commercially available proton implanted quantum well AlGaAs VCSEL operating at 850 nm in vacuo and irradiated by 4.5 MeV protons by a scanning ion microbeam is presented. Degradation of L-I-V responses at a proton dose of 1.19 MGy are discussed with particular attention drawn to heating arising from increased nonradiative carrier recombination and that resulting from the vacuum environment
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; nonradiative transitions; proton effects; quantum well lasers; surface emitting lasers; 1.9 MGy; 4.5 MeV; 850 nm; AlGaAs; AlGaAs vertical cavity surface emitting laser; in vacuo response; nonradiative carrier recombination; proton irradiation; quantum well VCSEL; scanning ion microbeam; space application; Laboratories; Laser beams; Mirrors; Photonics; Protons; Quantum well lasers; Space technology; Surface emitting lasers; USA Councils; Vertical cavity surface emitting lasers;
Journal_Title :
Nuclear Science, IEEE Transactions on
