DocumentCode
1395022
Title
Micromachined polysilicon power dissipation: simulation and experiment
Author
Allegretto, W. ; Shen, Bing ; Kleckner, Todd ; Robinson, A.M.
Author_Institution
Dept. of Math. Sci., Alberta Univ., Edmonton, Alta., Canada
Volume
16
Issue
6
fYear
1997
fDate
6/1/1997 12:00:00 AM
Firstpage
627
Lastpage
637
Abstract
In this paper, we present and implement a novel procedure for the accurate simulation of the thermoelectric effects which determine micromachined structures´ behavior. This approach is simple to discretize, with rapid numerical convergence properties, and it yields results which are in very good agreement with experimental observations. We employ this procedure in particular to calculate P1ATM/P VAC, where P1ATM (resp. AVAC) denotes heat conducted down the micromachined structure supporting arms at one atmosphere (resp. vacuum) when the device is at the same average temperature. We show that P1ATM/AVAC may not be unity, as had been earlier assumed, but is independent of input current. Finally, for a special class of devices, an analytical formula is obtained for P1ATM/PVAC in terms of device parameters, and this result is also compared with the numerical simulation results
Keywords
convergence of numerical methods; electronic engineering computing; elemental semiconductors; micromachining; micromechanical devices; silicon; simulation; temperature distribution; thermal analysis; thermoelectricity; Si; device parameters; heat conduction; micromachined polysilicon power dissipation; rapid numerical convergence properties; simulation; thermoelectric effects; Arm; Etching; Gas detectors; Glass; Power dissipation; Resistors; Silicon; Temperature sensors; Thermal conductivity; Thermal sensors;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/43.640620
Filename
640620
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