Title :
Analysis of single event effects at grazing angle [CMOS SRAMs]
Author :
Campbell, A.B. ; Musseau, O. ; Ferlet-Cavrois, V. ; Stapor, W.J. ; McDonald, P.T.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
6/1/1998 12:00:00 AM
Abstract :
Investigation of single event effects at grazing angle by both charge collection and multiple bit upset measurements evidences modified collection mechanisms with charge transfer between adjacent reverse biased structures
Keywords :
CMOS memory circuits; SRAM chips; integrated circuit reliability; ion beam effects; CMOS; IC radiation effects; SRAMs; adjacent reverse biased structures; charge collection; charge transfer; collection mechanisms; grazing angle; heavy ion sensitivity; multiple bit upset measurements; single event effects; CMOS technology; Charge transfer; Current measurement; Integrated circuit measurements; Ion accelerators; Ionization; Isolation technology; Laboratories; Random access memory; Space charge;
Journal_Title :
Nuclear Science, IEEE Transactions on
