• DocumentCode
    1395032
  • Title

    Analysis of single event effects at grazing angle [CMOS SRAMs]

  • Author

    Campbell, A.B. ; Musseau, O. ; Ferlet-Cavrois, V. ; Stapor, W.J. ; McDonald, P.T.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    45
  • Issue
    3
  • fYear
    1998
  • fDate
    6/1/1998 12:00:00 AM
  • Firstpage
    1603
  • Lastpage
    1611
  • Abstract
    Investigation of single event effects at grazing angle by both charge collection and multiple bit upset measurements evidences modified collection mechanisms with charge transfer between adjacent reverse biased structures
  • Keywords
    CMOS memory circuits; SRAM chips; integrated circuit reliability; ion beam effects; CMOS; IC radiation effects; SRAMs; adjacent reverse biased structures; charge collection; charge transfer; collection mechanisms; grazing angle; heavy ion sensitivity; multiple bit upset measurements; single event effects; CMOS technology; Charge transfer; Current measurement; Integrated circuit measurements; Ion accelerators; Ionization; Isolation technology; Laboratories; Random access memory; Space charge;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.685247
  • Filename
    685247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1395032