Title :
SEB occurrence in a VIP: Influence of the epi-substrate junction
Author :
Lorfévre, Eric ; Sudre, Christophe ; Dachs, Charles ; Detcheverry, Céline ; Palau, Jean-Marie ; Gasiot, Jean ; Calvet, Marie-Catherine ; Garnie, J. ; Ecoffet, Robert
Author_Institution :
Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fDate :
6/1/1998 12:00:00 AM
Abstract :
Heavy ion induced burnout is reported for the first time in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurrence
Keywords :
failure analysis; integrated circuit modelling; ion beam effects; power integrated circuits; semiconductor epitaxial layers; 2D simulation; SEB; VIP; epi-substrate junction; heavy ion induced burnout; single event burnout; vertical intelligent power; Circuits; Failure analysis; Ion accelerators; MOS devices; MOSFETs; Nuclear physics; Performance evaluation; Power supplies; Testing; Threshold current;
Journal_Title :
Nuclear Science, IEEE Transactions on
