Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques

Author

Sun, Chi-Kuang ; Keller, Stacia ; Chiu, Tien-Lung ; Wang, Gary ; Minsky, Milan S. ; Bowers, John E. ; DenBaars, S.P.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

3

Issue

3

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

731

Lastpage

738

Abstract

We present a well-width-dependent study of InGaN-GaN single-quantum wells using a time-resolved photoluminescence (PL) technique. At room temperature (RT), carrier recombination was found to be dominated by interface-related nonradiative processes. The dominant radiative recombination at RT was through band-to-band free carriers. For the sample grown at a higher growth rate, we observed a longer luminescence lifetime, which was attributed to an improved quantum-well (QW) interface. At low temperatures, the carrier recombination was found to be dominated by radiative recombination through a combination of free excitons, bound excitons, and free carriers. A decrease of radiative exciton lifetime was observed with decreased QW thickness

Keywords

III-V semiconductors; excitons; gallium compounds; high-speed optical techniques; indium compounds; optical testing; photoluminescence; radiative lifetimes; semiconductor device testing; semiconductor quantum wells; time resolved spectra; InGaN-GaN; InGaN-GaN single-quantum wells; band-to-band free carriers; bound excitons; carrier recombination; decreased QW thickness; dominant radiative recombination; free carriers; free excitons; interface-related nonradiative processes; low temperatures; luminescence lifetime; quantum-well interface; radiative exciton lifetime; radiative recombination; room temperature; s.; time-resolved photoluminescence techniques; well-width dependent studies; Charge carrier lifetime; Epitaxial growth; Excitons; Gallium nitride; Light emitting diodes; Luminescence; Photoluminescence; Radiative recombination; Sun; Temperature;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.640628

Filename

640628