DocumentCode :
1395091
Title :
Hydride vapor phase epitaxy revisited
Author :
Lourdudoss, Sebastian ; Kjebon, Olle
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
Volume :
3
Issue :
3
fYear :
1997
fDate :
6/1/1997 12:00:00 AM
Firstpage :
749
Lastpage :
767
Abstract :
The salient features of hydride vapor phase epitaxy (HYPE) process in the fabrication of optoelectronic devices are demonstrated by combining the state of the art results of several groups working in this field
Keywords :
optical fabrication; optoelectronic devices; semiconductor growth; vapour phase epitaxial growth; HYPE process; hydride vapor phase epitaxy; optoelectronic device fabrication; vapour phase epitaxy; Epitaxial growth; Epitaxial layers; Indium phosphide; Inductors; Laboratories; Molecular beam epitaxial growth; Nanostructures; Optical device fabrication; Optoelectronic devices; Semiconductor materials;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.640630
Filename :
640630
Link To Document :
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