In situ monitoring and control for MBE growth of optoelectronic devices

Author

Jackson, Andrew W. ; Pinsukanjana, Paul R. ; Gossard, Arthur C. ; Coldren, Larry A.

Author_Institution

Dept. of Mater., California Univ., Santa Barbara, CA, USA

Volume

3

Issue

3

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

836

Lastpage

844

Abstract

Improved control over layer thickness has been realized using optical interference techniques such as reflectance spectroscopy. It is now common to observe spectra of distributed-Bragg-reflector (DBR) mirrors during growth to make corrections for growth rate drifts. Real-time optical flux monitoring (OFM) by atomic absorption allows precise layer control by measuring group III fluxes continuously during growth. The flux information can be used to operate growth shutters and to control effusion cell heaters in a feedback loop. Improved substrate temperature measurement by diffuse reflectance spectroscopy (DRS) allows precise measurement of substrate temperature. DRS is not subject to the same errors encountered in pyrometer or thermocouple measurements of substrate temperature

Keywords

atomic absorption spectroscopy; distributed Bragg reflector lasers; interference spectroscopy; molecular beam epitaxial growth; optoelectronic devices; reflectometry; semiconductor growth; substrates; surface emitting lasers; temperature measurement; thickness control; thickness measurement; MBE growth; VCSEL; atomic absorption; control; diffuse reflectance spectroscopy; distributed-Bragg-reflector mirrors; effusion cell heaters; feedback loop; flux information; group III fluxes; growth rate drifts; growth shutters; in situ monitoring; layer thickness; optical interference techniques; optoelectronic devices; precise layer control; pyrometer measurements; real-time optical flux monitoring; reflectance spectroscopy; substrate temperature; substrate temperature measurement; thermocouple measurements; Atom optics; Atomic measurements; Interference; Monitoring; Optical control; Optical feedback; Reflectivity; Spectroscopy; Temperature measurement; Thickness control;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.640637

Filename

640637