Title :
Fabrication of InGaAs-AlGaAs-GaAs integrated twin-guide corner reflector lasers using in situ laser reflectometry
Author :
Hong, Sung-Kwon ; Kwon, Young-Se
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
fDate :
6/1/1997 12:00:00 AM
Abstract :
We have fabricated integrated twin-guide (ITG) corner reflector (CR) InGaAs-AlGaAs-GaAs laser diodes for the wavelength of 980 mn. In an ITG laser diode, the coupling between active layer and output waveguide is very strong so that the operation of the ITG laser diode is sensitive to variations in epitaxial growth structures and material parameters. We have investigated the dependencies of ITG-CR lasers on these parameters. An in situ laser reflectometry system was used to control epitaxial thickness and etching depth, precisely. Optical dispersion parameters based on Afromowitz´s formula was applied to in situ laser reflectometry,
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; optical fabrication; reflectometry; semiconductor growth; semiconductor lasers; sputter etching; thickness control; vapour phase epitaxial growth; waveguide lasers; 980 nm; Afromowitz´s formula; InGaAs-AlGaAs-GaAs; InGaAs-AlGaAs-GaAs integrated twin-guide corner reflector lasers; InGaAs-AlGaAs-GaAs laser diodes; active layer; coupling; epitaxial growth structures; epitaxial thickness; etching depth; fabrication; in situ laser reflectometry; in situ laser reflectometry system; material parameters; optical dispersion parameters; output waveguide; Chromium; Diode lasers; Epitaxial growth; Optical control; Optical coupling; Optical device fabrication; Optical materials; Optical waveguides; Reflectometry; Waveguide lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.640639
