• DocumentCode
    1395165
  • Title

    A new approach to the design optimization of HEMT and HBT for maximum gain-bandwidth of MSM-based integrated photoreceiver and its noise performance at 1.55 μm

  • Author

    Das, Nikhil Ranjan ; Basu, P.K. ; Deen, M. Jamal

  • Author_Institution
    Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
  • Volume
    47
  • Issue
    11
  • fYear
    2000
  • fDate
    11/1/2000 12:00:00 AM
  • Firstpage
    2101
  • Lastpage
    2109
  • Abstract
    A new and simple approach has been proposed for the design optimization of devices using PSPICE, and it has been applied to the design of high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) for the maximum gain-bandwidth (GBW) of a front-end integrated photoreceiver that uses metal-semiconductor-metal (MSM) structure as the photodetector at 1.55 μm. The standard high frequency circuit models are used with some important modifications to simplify the model equations. The results of the optimized design show that the gain-bandwidth of the photoreceiver can be raised to a very high value compared to those of nonoptimized structures. Finally, the sensitivity of the integrated photoreceivers are calculated for a bit-error-rate of 10-9
  • Keywords
    HEMT integrated circuits; SPICE; bipolar integrated circuits; heterojunction bipolar transistors; high electron mobility transistors; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; semiconductor device models; semiconductor device noise; 1.55 micrometre; HBT; HEMT; MSM-based integrated photoreceiver; PSPICE; bit-error-rate; design optimization; front-end integrated photoreceiver; gain-bandwidth; high frequency circuit models; model equations; noise performance; photodetector; sensitivity; Circuits; Concurrent computing; Design optimization; Doping; HEMTs; Heterojunction bipolar transistors; MODFETs; Optical computing; PIN photodiodes; Photodetectors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.877172
  • Filename
    877172