Title :
Design and fabrication of VCSELs with AlxOy-GaAs DBRs
Author :
MacDougal, Michael H. ; Dapkus, P.Daniel ; Bond, Aaron E. ; Lin, Chao-Kun ; Geske, Jon
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fDate :
6/1/1997 12:00:00 AM
Abstract :
A procedure for fabricating vertical-cavity surface-emitting lasers (VCSELs) with oxide-based distributed Bragg reflectors (DBRs) is presented. An in-depth analysis of parameters and behavior unique to oxide VCSELs determines the device design. The development cycle time for these devices is reduced through development of a method for post-growth analysis of the epitaxial stack reflectivity before device processing. Threshold currents as low as 160 μA and resistances as low as 80 Ω are demonstrated using different device designs. The total optical loss of low-doped oxide VCSEL structures is 0.163% which is comparable to VCSEL designs based on all-semiconductor DBRs. The thermal resistance of an 8×8 μm VCSEL is measured to be 2.8°C/mW, demonstrating that the presence of oxide layers does not act as a barrier to heat flow out of the active region
Keywords :
III-V semiconductors; alumina; distributed Bragg reflector lasers; gallium arsenide; optical design techniques; optical fabrication; optical losses; semiconductor lasers; surface emitting lasers; 160 muA; 8 mum; 80 ohm; AlxOy-GaAs DBR; AlO-GaAs; VCSEL; active region; design; development cycle time; device processing; epitaxial stack reflectivity; fabrication; heat flow; in-depth analysis; low-doped oxide VCSEL structure; optical loss; oxide VCSEL; oxide layers; oxide-based distributed Bragg reflectors; post-growth analysis; thermal resistance; threshold currents; vertical-cavity surface-emitting lasers; Distributed Bragg reflectors; Electrical resistance measurement; Optical design; Optical device fabrication; Optical losses; Reflectivity; Surface emitting lasers; Thermal resistance; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.640644
