Title :
The integration of III-V optoelectronics with silicon circuitry
Author :
Mathine, David L.
Author_Institution :
Opt. Sci. Center, Arizona Univ., Tucson, AZ, USA
fDate :
6/1/1997 12:00:00 AM
Abstract :
The integration of III-V optoelectronics with silicon circuitry provides the potential for fabricating dense parallel optical interconnects with data links capable of Terabit aggregate data rates. This paper reviews many of the current approaches used for the fabrication of integrated optoelectronic devices and then highlights the performance results. Finally, the applied method is reviewed in greater detail with recent results on VCSEL, MESFET, and photodiode integration presented
Keywords :
III-V semiconductors; MESFET integrated circuits; data communication; integrated circuit technology; integrated optoelectronics; laser cavity resonators; optical fabrication; optical fibre LAN; optical interconnections; parallel architectures; photodiodes; reviews; semiconductor lasers; surface emitting lasers; III-V optoelectronics integration; MESFET; Terabit aggregate data rates; VCSEL; data links; dense parallel optical interconnects; integrated optoelectronic device fabrication; photodiode integration; reviewed; reviews; silicon circuitry; Aggregates; Circuits; III-V semiconductor materials; Integrated optoelectronics; MESFETs; Optical device fabrication; Optical interconnections; Photodiodes; Silicon; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.640649
