Self-heating effects in silicon carbide MESFETs

Author

Royet, A.S. ; Ouisse, T. ; Cabon, B. ; Noblanc, O. ; Arnodo, C. ; Brylinski, C.

Author_Institution

Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France

Volume

47

Issue

11

fYear

2000

fDate

11/1/2000 12:00:00 AM

Firstpage

2221

Lastpage

2227

Abstract

Silicon carbide materials offer specific advantages to MESFET applications. However, to put them to good use requires to apply higher drain voltages than in GaAs devices. Therefore, in spite of the high thermal conductivity of the SiC substrates, this leads to a large power dissipation and a substantial increase in the local temperature. Depending on the device configuration, this self-heating can induce a negative differential conductance at very low frequency near dc regime. A simple analytical model is proposed, which yields a reasonable fit of the MESFET static characteristics. Further experimental evidence for such effects is also given, which corroborates the predictions of the model

Keywords

Schottky gate field effect transistors; negative resistance; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; analytical model; negative differential conductance; power dissipation; self-heating; silicon carbide MESFET; static characteristics; thermal conductivity; Analytical models; Conducting materials; Frequency; Gallium arsenide; MESFETs; Power dissipation; Silicon carbide; Temperature; Thermal conductivity; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.877187

Filename

877187