A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides

Author

Ahmed, Khaled ; Wortman, Jimmie J. ; Hauser, John R.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

47

Issue

11

fYear

2000

fDate

11/1/2000 12:00:00 AM

Firstpage

2236

Lastpage

2237

Abstract

Based on two-dimensional (2-D) numerical simulation, a pulsed-drain current (PDC) measurement technique in weak inversion is investigated as an alternative to the standard charge-pumping technique for the extraction of interface trap density using small geometry MOSFETs. The PDC technique was found particularly useful for small MOSFETs with sub-20 Å oxides to avoid high gate tunneling current effects. The numerical simulation results are in excellent agreement with the simple analytical expressions used in the PDC technique

Keywords

MOSFET; interface states; semiconductor device measurement; semiconductor device models; MOSFET; interface trap density; parameter extraction; pulsed drain current transient measurement; two-dimensional numerical simulation; ultrathin oxide; weak inversion; Doping profiles; Electrons; Geometry; Interface states; MOSFETs; Measurement techniques; Numerical simulation; Pulse measurements; Tunneling; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.877189

Filename

877189