Title :
Avalanche photodiode image sensor in standard BiCMOS technology
Author :
Biber, A. ; Seitz, P. ; Jäckel, H.
Author_Institution :
Centre Suisse d´´Electronique et de Microtechnique SA, Neuchatel, Switzerland
fDate :
11/1/2000 12:00:00 AM
Abstract :
To overcome the transistor-induced noise limitations of solid-state image sensors at low light levels, we investigate a programmable camera concept based on an image sensor that employs the avalanche effect for photogenerated charge carriers. Each pixel consists of an avalanche photodiode (APD), high-voltage stabilization circuitry, and image readout electronics. Special emphasis is placed on the integration and characterization of such an APD image sensor with an unmodified, commercially available BiCMOS process. Experimental results of the first APD camera in BiCMOS technology with 12×24 pixels shows individually programmable, stable diode gain up to a factor of 1000
Keywords :
BiCMOS integrated circuits; avalanche photodiodes; cameras; image sensors; 12 pixel; 24 pixel; BiCMOS technology; avalanche photodiode; high voltage stabilization circuit; image readout electronics; imaging array; programmable camera; solid-state image sensor; Avalanche photodiodes; BiCMOS integrated circuits; Cameras; Charge carriers; Circuit noise; Image sensors; Noise level; Pixel; Readout electronics; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
