Avalanche photodiode image sensor in standard BiCMOS technology

Author

Biber, A. ; Seitz, P. ; Jäckel, H.

Author_Institution

Centre Suisse d´´Electronique et de Microtechnique SA, Neuchatel, Switzerland

Volume

47

Issue

11

fYear

2000

fDate

11/1/2000 12:00:00 AM

Firstpage

2241

Lastpage

2243

Abstract

To overcome the transistor-induced noise limitations of solid-state image sensors at low light levels, we investigate a programmable camera concept based on an image sensor that employs the avalanche effect for photogenerated charge carriers. Each pixel consists of an avalanche photodiode (APD), high-voltage stabilization circuitry, and image readout electronics. Special emphasis is placed on the integration and characterization of such an APD image sensor with an unmodified, commercially available BiCMOS process. Experimental results of the first APD camera in BiCMOS technology with 12×24 pixels shows individually programmable, stable diode gain up to a factor of 1000

Keywords

BiCMOS integrated circuits; avalanche photodiodes; cameras; image sensors; 12 pixel; 24 pixel; BiCMOS technology; avalanche photodiode; high voltage stabilization circuit; image readout electronics; imaging array; programmable camera; solid-state image sensor; Avalanche photodiodes; BiCMOS integrated circuits; Cameras; Charge carriers; Circuit noise; Image sensors; Noise level; Pixel; Readout electronics; Solid state circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.877191

Filename

877191