A Precision Dose Control Circuit for Maskless E-Beam Lithography With Massively Parallel Vertically Aligned Carbon Nanofibers

Author

Eliza, Sazia A. ; Islam, Syed K. ; Rahman, Touhidur ; Bull, Nora Dianne ; Blalock, Benjamin J. ; Baylor, Larry R. ; Ericson, M. Nance ; Gardner, Walter L.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA

Volume

60

Issue

4

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

1132

Lastpage

1140

Abstract

This paper describes a highly accurate dose control circuit (DCC) for the emission of a desired number of electrons from vertically aligned carbon nanofibers (VACNFs) in a massively parallel maskless e-beam lithography system. The parasitic components within the VACNF device cause a premature termination of the electron emission, resulting in underexposure of the photoresist. In this paper, we compensate for the effects of the parasitic components and noise while reducing the area of the chip and achieving a precise count of emitted electrons from the VACNFs to obtain the optimum dose for the e-beam lithography.

Keywords

carbon nanotubes; electron beam lithography; electron emission; photoresists; C; VACNF device; electron emission; maskless e-beam lithography system; massive parallel vertically aligned carbon nanofibers; parasitic component effect compensation; photoresist; precision dose control circuit; Dose control circuit (DCC); maskless lithography; vertically aligned carbon nanofiber (VACNF);

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/TIM.2010.2090691

Filename

5658146