DocumentCode
1395416
Title
A Novel Measurement Method to Determine the 
– 
Characteristic of a Solar Photovoltaic C
Author
Jeevandoss, C.R. ; Kumaravel, M. ; Kumar, V. Jagadeesh
Author_Institution
Central Electron. Centre, Indian Inst. of Technol. Madras, Chennai, India
Volume
60
Issue
5
fYear
2011
fDate
5/1/2011 12:00:00 AM
Firstpage
1761
Lastpage
1767
Abstract
A novel method for characterizing a single crystalline or poly-silicon solar photovoltaic (SPV) cell is proposed. The extraction of the parameters of an SPV cell is hindered by the presence of its leakage resistance. It is demonstrated here that in employing a negative resistance, not only the C-V characteristics but also the R-V characteristics along with the built-in potential and the doping concentration of an SPV cell are easily ascertained. The experimental results presented herein validate the proffered method.
Keywords
solar cells; SPV cell; built in potential; doping concentration; leakage resistance; negative resistance; polysilicon solar photovoltaic cell; single crystalline solar photovoltaic cell; Capacitance; Current measurement; Doping; Electrical resistance measurement; Measurement uncertainty; Resistance; Semiconductor device measurement; $C$ $V$ $R$ $V$
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/TIM.2010.2091183
Filename
5658148
Link To Document