Title :
A complete model of the I-V characteristics for narrow-gate MOSFETs
Author :
Chung, Steve Shao-Shiun
Author_Institution :
Dept. of Electron. Eng., Nat. Chaio Tung Univ., Hsinchu, Taiwan
fDate :
4/1/1990 12:00:00 AM
Abstract :
A unified and process-independent MOSFET model for accurate prediction of the I-V characteristics and the threshold voltages of narrow-gate MOSFETs is discussed. It is based on several enhancements of the SPICE2 LEVEL3 MOS model and the author´s previous subthreshold I-V model. The expressions achieved for the drain current hold in the subthreshold, transition, and strong inversion regions. A continuous model is proposed for the transition region, using a scheme that ensures that both the current and conductance are continuous and will not cause convergence problems for circuit simulation applications. All of the modeled parameters are taken from experimentally measured I-V characteristics and preserve physical meaning. Comparisons between the measured and modeled I-V characteristics show excellent agreement for a wide range of channel widths and biases. The model is well suited for circuit simulation in SPICE
Keywords :
insulated gate field effect transistors; semiconductor device models; I-V characteristics; SPICE2 LEVEL3 MOS model; circuit simulation; continuous model; drain current; model; narrow-gate MOSFETs; strong inversion regions; subthreshold I-V model; threshold voltages; transition region; Capacitance; Circuit simulation; Convergence; Degradation; Dielectric constant; Electrons; MOSFETs; Predictive models; SPICE; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
