Title :
Monolithic implementation of coaxial line on silicon substrate
Author :
Jeong, In-Ho ; Kwon, Young-Se
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
fDate :
10/1/2000 12:00:00 AM
Abstract :
A coaxial line has been monolithically fabricated on a silicon substrate using benzocylobutene (BCB) for dielectric spacers. Because of its closed structure, it is an effective interconnection method to reduce parasitic radiation and the coupling effect. The fabricated coaxial line with 2 mm length has high isolation (<-60 dB), low attenuation (<0.08 dB/mm) and low return loss (<-32 dB) in the range of 1-20 GHz. It can be easily fabricated using standard silicon IC technologies, and requires no wafer thinning and backside processing. In view of cost performance and integration density, the coaxial line on low-resistivity silicon is shown to be suitable for RF interconnect and multichip module (MCM) package applications
Keywords :
MIMIC; MMIC; coaxial waveguides; high-frequency transmission lines; integrated circuit interconnections; integrated circuit packaging; multichip modules; silicon; substrates; -32 dB; 1 to 20 GHz; BCB dielectric spacers; MCM package applications; RF interconnect applications; Si; Si MMIC; Si substrate; benzocylobutene spacers; coaxial line; coupling effect reduction; interconnection method; low-resistivity Si; microwave packaging; monolithic implementation; multichip module; parasitic radiation reduction; Coatings; Coaxial components; Coplanar transmission lines; Costs; Crosstalk; Dielectric substrates; Distributed parameter circuits; Integrated circuit interconnections; Planar transmission lines; Silicon;
Journal_Title :
Microwave and Guided Wave Letters, IEEE