DocumentCode :
1395565
Title :
Nanoscale 2-Bit/Cell HfO 
Nanocrystal Flash Memory
Author :
Lin, Yu-Hsien ; Chien, Chao-Hsin
Author_Institution :
Dept. of Electron. Eng., Nat. United Univ., Miaoli, Taiwan
Volume :
11
Issue :
2
fYear :
2012
fDate :
3/1/2012 12:00:00 AM
Firstpage :
412
Lastpage :
417
Abstract :
In this paper, we demonstrate 50-nm trigate nonvolatile HfO2 nanocrystal memory devices on silicon-on-insulator wafers. The proposed technique, which is fully compatible with current CMOS technologies, is used to form highly localized HfO2 nanocrystals for application in nonvolatile flash memory. We successfully scale down conventional nonvolatile floating gate memories below the 50-nm node to achieve nanodevices for application in next-generation nonvolatile memories.
Keywords :
flash memories; hafnium compounds; nanostructured materials; random-access storage; silicon-on-insulator; CMOS technologies; HfO2; Si; bit rate 2 bit/s; localized nanocrystals; nanocrystal flash memory; nanoscale cell; silicon-on-insulator wafers; size 50 nm; trigate nonvolatile nanocrystal memory devices; Flash memory; Hafnium compounds; Nanocrystals; Nanoscale devices; Nonvolatile memory; Programming; Silicon; Flash memory; hafnium oxide; nanocrystals; nonvolatile memories;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2011.2179062
Filename :
6099626
Link To Document :
