Title :
Effective photoconductivity and plasma depth in optically quasi-CW controlled microwave switching devices
Author_Institution :
Inst. fur Hochfrequenztech., Erlangen-Nurnberg Univ., West Germany
fDate :
6/1/1988 12:00:00 AM
Abstract :
Presents an analysis of the carrier diffusion and surface recombination processes in gap-structure MIC devices at quasi-CW laser excitation. Quite simple analytical expressions are obtained for the effective laser-induced photoconductivity and the plasma penetration depth. The formulas have been confirmed by experiment, and allow application of the well-known lumped element analysis of the gap region (often used in the field of optoelectronic microwave switching) even under quasi-CW or pure-CW excitation condition
Keywords :
carrier lifetime; electron-hole recombination; microwave integrated circuits; photoconducting devices; semiconductor switches; solid-state plasma; analytical expressions; carrier diffusion; effective photoconductivity; gap region; gap-structure MIC devices; lumped element analysis; optically quasi-CW controlled microwave switching devices; plasma depth; plasma penetration depth; quasi-CW laser excitation; surface recombination processes;
Journal_Title :
Optoelectronics, IEE Proceedings J
