DocumentCode :
13957
Title :
Composition- and Doping-Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors Exhibiting Simultaneous 
and 
Author :
Kashio, Norihide ; Hoshi, T. ; Kurishima, Kenji ; Ida, Minoru ; Matsuzaki, Hideaki
Author_Institution :
NTT Device Innovation Center, NTT Corp., Atsugi, Japan
Volume :
35
Issue :
12
fYear :
2014
fDate :
Dec. 2014
Firstpage :
1209
Lastpage :
1211
Abstract :
We demonstrate composition- and doping-graded-base InP/InGaAsSb double heterojunction bipolar transistors (DHBTs) with a passivation ledge fabricated in a self-aligned process with i-line lithography. We obtained a high current gain of 52 and high breakdown voltage of 5 V for 0.2-μm-emitter DHBTs featuring 30-nm-thick composition- and doping-graded InGaAsSb base and 100-nm-thick InP collector. The HBTs exhibit an ft of 501 GHz and an fmax of 503 GHz at a collector current density of 10.6 mA/μm2 .
Keywords :
current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; semiconductor doping; submillimetre wave transistors; ultraviolet lithography; InP-InGaAsSb; breakdown voltage; collector current density; composition-graded-base double-heterojunction bipolar transistors; current gain; doping-graded-base DHBT; frequency 501 GHz; frequency 503 GHz; i-line lithography; passivation ledge; self-aligned process; size 0.2 mum; size 100 nm; size 30 nm; voltage 5 V; Breakdown voltage; Double heterojunction bipolar transistors; Gain; Indium gallium arsenide; Indium phosphide; Passivation; InGaAsSb; InP/GaAsSb; composition-graded base; double heterojunction bipolar transistors (DHBTs);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2365216
Filename :
6937124
Link To Document :
