Mechanisms leading to nonlinear electrical response of a nano p-SiC/silicone rubber composite

Author

Wang, X. ; Nelson, J.K. ; Schadler, L.S. ; Hillborg, H.

Author_Institution

Rensselaer Polytech. Inst., Troy, NY, USA

Volume

17

Issue

6

fYear

2010

Firstpage

1687

Lastpage

1696

Abstract

It is well known that hopping of charge carriers via spatially and energetically distributed localized states is a primary transport mechanism in many disordered semiconductors and polymeric dielectrics. In this contribution, the nonlinear I-V physics of a 25 vol% 50 nm p-SiC/silicone rubber composite for high voltage field grading application was investigated, and a composite bulk hopping mechanism proposed. It is hypothesized that nearest-neighbor hole hopping occurs through thin rubbery layers between the SiC particles, and is the mechanism governing the nonlinear electric response of SiC/silicone rubber nanocomposites.

Keywords

dielectric materials; electric properties; localised states; nanocomposites; silicon compounds; silicone rubber; wide band gap semiconductors; SiC-JkJk; charge carrier hopping; disordered semiconductor; energetically distributed localized state; nonlinear electrical response; polymeric dielectrics; rubber nanocomposite; silicone rubber composite; transport mechanism; voltage field grading application; Charge carrier processes; Dielectrics; Equations; Powders; Rubber; Silicon carbide; Temperature measurement; Nonlinear electrical, mechanism, high field, hole hopping transport, nearest-neighbor, thin rubbery layer, field grading, nanocomposite;

fLanguage

English

Journal_Title

Dielectrics and Electrical Insulation, IEEE Transactions on

Publisher

ieee

ISSN

1070-9878

Type

jour

DOI

10.1109/TDEI.2010.5658218

Filename

5658218