Title :
Mechanisms leading to nonlinear electrical response of a nano p-SiC/silicone rubber composite
Author :
Wang, X. ; Nelson, J.K. ; Schadler, L.S. ; Hillborg, H.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
It is well known that hopping of charge carriers via spatially and energetically distributed localized states is a primary transport mechanism in many disordered semiconductors and polymeric dielectrics. In this contribution, the nonlinear I-V physics of a 25 vol% 50 nm p-SiC/silicone rubber composite for high voltage field grading application was investigated, and a composite bulk hopping mechanism proposed. It is hypothesized that nearest-neighbor hole hopping occurs through thin rubbery layers between the SiC particles, and is the mechanism governing the nonlinear electric response of SiC/silicone rubber nanocomposites.
Keywords :
dielectric materials; electric properties; localised states; nanocomposites; silicon compounds; silicone rubber; wide band gap semiconductors; SiC-JkJk; charge carrier hopping; disordered semiconductor; energetically distributed localized state; nonlinear electrical response; polymeric dielectrics; rubber nanocomposite; silicone rubber composite; transport mechanism; voltage field grading application; Charge carrier processes; Dielectrics; Equations; Powders; Rubber; Silicon carbide; Temperature measurement; Nonlinear electrical, mechanism, high field, hole hopping transport, nearest-neighbor, thin rubbery layer, field grading, nanocomposite;
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
DOI :
10.1109/TDEI.2010.5658218
