Single-Event Upsets in Substrate-Etched CMOS SOI SRAMs Using Ultraviolet Optical Pulses With Sub-Micrometer Spot Size

Author

McMorrow, Dale ; Khachatrian, Ani ; Roche, Nicholas J.-H ; Warner, Jeffrey H. ; Buchner, Stephen P. ; Kanyogoro, Nderitu ; Melinger, Joseph S. ; Pouget, V. ; Larue, C. ; Hurst, Alan ; Kagey, Dan

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

60

Issue

6

fYear

2013

fDate

Dec. 2013

Firstpage

4184

Lastpage

4191

Abstract

Ultraviolet optical pulses with a full-width-at-half-maximum diameter focused spot size of 0.32 μm are generated, characterized, and used to produce SEUs in a 90 nm CMOS/SOI SRAM. The results provide unequivocal experimental evidence for cell-to-cell variations in SEU sensitivity that can be identified with process variations at the individual transistor level.

Keywords

CMOS memory circuits; SRAM chips; elemental semiconductors; etching; integrated optoelectronics; optical focusing; silicon; silicon-on-insulator; SEU sensitivity; Si; cell-to-cell variation; distance 0.32 mum; full-width-at-half-maximum diameter focused spot size; individual transistor level; single-event upset; size 90 nm; submicrometer spot size; substrate-etched CMOS SOI SRAM; ultraviolet optical pulse; unequivocal experimental evidence; CMOS integrated circuits; Optical pulses; Random access memory; Sensitivity; Single event upsets; ${rm XeF}_{2}$; Heavy ions; SOI; SRAM; laser; silicon substrate; single-event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2290307

Filename

6678954