• DocumentCode
    1395977
  • Title

    Aluminium nitride/nanodiamond structures for high-frequency surface acoustic wave nanotransducers

  • Author

    Alamin Dow, Ali B. ; Ahmed, Arif ; Popov, C. ; Schmid, Ulrich ; Kherani, Nazir P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
  • Volume
    7
  • Issue
    10
  • fYear
    2012
  • fDate
    10/1/2012 12:00:00 AM
  • Firstpage
    1030
  • Lastpage
    1032
  • Abstract
    Surface acoustic waves (SAWs) have been used extensively for a variety of applications such as telecommunications, electronic devices and sensors. The emerging need for high-bit data processing at GHz frequencies and the requirement of high-sensitivity sensors demand the development of high-efficiency SAW devices. With the objective of exploiting the high acoustic velocity of diamond, the authors report on an optimally developed nanodiamond (ND) thin film with crystal size of 3-5-nm, embedded in an amorphous carbon matrix with grain boundaries of 1-1.5-nm, that is integrated with aluminium nitride (AlN) to extend the operating frequency of SAW transducers. The authors utilise this attractive property of diamond through facile synthesis of a bi-layer structure consisting of sputtered AlN deposited on ND. Deposition of ND was carried out using microwave plasma-enhanced chemical vapour deposition. AlN/ND-based SAW structures were fabricated using electron beam lithography to produce high acoustic velocity transducers. The fabricated SAW transducers were composed of two spatial periods of 1400 and 3200-nm devices. The fabricated devices exhibit an operating frequency of -2-GHz with an acoustic velocity of 8120 and 9280-m/s, respectively.
  • Keywords
    III-V semiconductors; aluminium compounds; diamond; electron beam lithography; elemental semiconductors; grain boundaries; nanoelectromechanical devices; nanofabrication; nanolithography; nanostructured materials; plasma CVD; semiconductor growth; semiconductor thin films; sputter deposition; surface acoustic wave transducers; wide band gap semiconductors; AlN-C; AlN/nanodiamond-based surface acoustic wave structures; aluminium nitride-nanodiamond structures; amorphous carbon matrix; bilayer structure synthesis; crystal size; diamond acoustic velocity; diamond property; electron beam lithography; electronic devices; gigahertz frequencies; grain boundaries; high acoustic velocity transducers; high-bit data processing; high-efficiency surface acoustic wave device development; high-frequency surface acoustic wave nanotransducers; high-sensitivity sensors; microwave plasma-enhanced chemical vapour deposition; nanodiamond deposition; operating frequency; optimally developed nanodiamond thin film; size 3 nm to 5 nm; spatial periods; sputtered AlN; telecommunications;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2012.0587
  • Filename
    6407209