• DocumentCode
    1396025
  • Title

    Field-emission property of ZnSe nanoarrays

  • Author

    Qing Su ; Lijuan Li ; Shanying Li ; Haipeng Zhao

  • Author_Institution
    Dept. of Chem. & Chem. Eng., Henan Univ. of Urban Constr., Pingdingshan, China
  • Volume
    7
  • Issue
    10
  • fYear
    2012
  • fDate
    10/1/2012 12:00:00 AM
  • Firstpage
    1053
  • Lastpage
    1055
  • Abstract
    ZnSe nanoarrays were synthesised via the solvothermal method. The morphology and structure characterisations reveal that the as-synthesised individual ZnSe nanoribbon has a wurtzite structure with a height of 3 m and width of 30 100 nm. The field emission properties characterisations demonstrate that ZnSe nanoarrays have good FE properties with the low-turn-on field of 4.05 V m-1 and the high-field enhancement factor of 1228.
  • Keywords
    II-VI semiconductors; crystal morphology; field emission; nanofabrication; nanoribbons; semiconductor growth; wide band gap semiconductors; zinc compounds; ZnSe; crystal morphology; crystal structure; field-emission property; high-field enhancement factor; low-turn-on field; nanoarrays; nanoribbon; size 3 micron; size 30 nm to 100 nm; solvothermal method; wurtzite structure;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2012.0589
  • Filename
    6407215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1396025