Characterization of High-Linearity Modified Uni-Traveling Carrier Photodiodes Using Three-Tone and Bias Modulation Techniques

Author

Pan, Huapu ; Li, Zhi ; Beling, Andreas ; Campbell, Joe C.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA

Volume

28

Issue

9

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

1316

Lastpage

1322

Abstract

The linearity performance of a back-illuminated InGaAs/InP modified uni-traveling carrier photodiode with a highly doped p-type absorber is characterized using three-tone and bias modulation measurement techniques. The bias modulation measurement is used to determine the voltage-dependent relative responsivity, R(V), for a range of photocurrent levels. The results confirm that the photocurrent dependence of the third-order output intercept point (OIP3) as determined by the three-tone method is directly related to the dependence of R(V) on photocurrent. The measured OIP3 show a weak dependence on frequency and a high value of 47.5 dBm at 20 GHz is achieved.

Keywords

III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; integrated optoelectronics; photoconductivity; photodiodes; semiconductor heterojunctions; InGaAs-InP; bias modulation; frequency 20 GHz; highly doped p-type absorber; linearity performance; photocurrent levels; third-order output intercept point; three-tone modulation; unitraveling carrier photodiodes; voltage-dependent relative responsivity; Intermodulation distortion; nonlinearities; photodiodes; third-order output intercept point (OIP3);

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2010.2041038

Filename

5398931