High-Temperature Performance of Silicon Junctionless MOSFETs

Author

Lee, Chi-Woo ; Borne, Adrien ; Ferain, Isabelle ; Afzalian, Aryan ; Yan, Ran ; Akhavan, Nima Dehdashti ; Razavi, Pedram ; Colinge, Jean-Pierre

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland

Volume

57

Issue

3

fYear

2010

fDate

3/1/2010 12:00:00 AM

Firstpage

620

Lastpage

625

Abstract

This paper investigates the temperature dependence of the main electrical parameters of junctionless (JL) silicon nanowire transistors. Direct comparison is made to silicon nanowire (trigate) MOSFETs. Variation of parameters such as threshold voltage and on-off current characteristics is analyzed. The JL silicon nanowire FET has a lager variation of threshold voltage with temperature than the standard inversion- and accumulation-mode FETs. Unlike in classical devices, the drain current of JL FETs increases when temperature is increased.

Keywords

MOSFET; elemental semiconductors; nanowires; silicon; Si; drain current; electrical parameter; high-temperature performance; junctionless silicon nanowire transistor; on-off current characteristics; silicon junctionless MOSFET; temperature dependence; threshold voltage; Doping profiles; Electric variables; FETs; Leakage current; MOS devices; MOSFETs; Nanoscale devices; Semiconductor device doping; Silicon; Temperature dependence; Threshold voltage; High temperature; junctionless (JL) FET; multiple-gate MOSFET; silicon nanowire FET;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2039093

Filename

5398948