24 to 79 GHz frequency band reconfigurable LNA

Author

Ulusoy, A. Cagri ; Kaynak, Mehmet ; Purtova, T. ; Tillack, Bernd ; Schumacher, Hermann

Author_Institution

Inst. of Electron Devices & Circuits, Ulm Univ., Ulm, Germany

Volume

48

Issue

25

fYear

2012

Firstpage

1598

Lastpage

1600

Abstract

A 24 to 79 GHz frequency-band reconfigurable low-noise amplifier (LNA) is presented, realised in an emerging RF-MEMS/BiCMOS technology. The technology implements shunt capacitive RF-MEMS switches realised in the standard metallisation layers of the BiCMOS process, thus enabling direct monolithic integration into the underlying active devices. The measurements of the realised LNA show very good performance in both bands, which are separated in frequency by a factor of three. These results demonstrate a high potential towards novel, highly flexible components for practical micro- and millimetre-wave systems.

Keywords

BiCMOS integrated circuits; integrated circuit metallisation; low noise amplifiers; microswitches; microwave amplifiers; microwave integrated circuits; millimetre wave amplifiers; millimetre wave integrated circuits; BiCMOS technology; active devices; direct monolithic integration; frequency 24 GHz to 79 GHz; low-noise amplifier; microwave systems; millimetre wave systems; reconfigurable LNA; shunt capacitive RF-MEMS switches; standard metallisation layers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2012.2830

Filename

6407240