Impacts of the Underlying Insulating Layers on the MILC Growth Length and Electrical Characteristics

Author

Liao, Chia-Chun ; Lin, Min-Chen ; Liu, Shao-Xuan ; Chao, Tien-Sheng

Author_Institution

Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

33

Issue

2

fYear

2012

Firstpage

239

Lastpage

241

Abstract

This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.

Keywords

amorphous semiconductors; crystallisation; elemental semiconductors; getters; insulating thin films; internal stresses; semiconductor thin films; silicon; silicon compounds; thin film transistors; MILC growth length; Si-SiN; Si-SiO; amorphous silicon; electrical characteristics; gettering; intrinsic stress; metal induced lateral crystallization; p-channel TFT; polySi thin film transistor; proximity layer effect; underlying insulating layers; Crystallization; Nickel; Silicon compounds; Stress; Thin film transistors; Threshold voltage; Metal-induced lateral crystallization (MILC); strain; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2174609

Filename

6101550