Title :
Impacts of the Underlying Insulating Layers on the MILC Growth Length and Electrical Characteristics
Author :
Liao, Chia-Chun ; Lin, Min-Chen ; Liu, Shao-Xuan ; Chao, Tien-Sheng
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.
Keywords :
amorphous semiconductors; crystallisation; elemental semiconductors; getters; insulating thin films; internal stresses; semiconductor thin films; silicon; silicon compounds; thin film transistors; MILC growth length; Si-SiN; Si-SiO; amorphous silicon; electrical characteristics; gettering; intrinsic stress; metal induced lateral crystallization; p-channel TFT; polySi thin film transistor; proximity layer effect; underlying insulating layers; Crystallization; Nickel; Silicon compounds; Stress; Thin film transistors; Threshold voltage; Metal-induced lateral crystallization (MILC); strain; thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2174609
