A Nonpiecewise Model for Long-Channel Junctionless Cylindrical Nanowire FETs

Author

Duarte, Juan P. ; Choi, Sung-Jin ; Moon, Dong-Il ; Choi, Yang-Kyu

Author_Institution

Dept. of Electr. Eng., KAIST, Daejeon, South Korea

Volume

33

Issue

2

fYear

2012

Firstpage

155

Lastpage

157

Abstract

A nonpiecewise drain current model is formulated for long-channel junctionless (JL) cylindrical nanowire (CN) FETs. It is obtained by using the Pao-Sah integral and a continuous charge model, which is derived by extending the parabolic potential approximation in all regions of the device operation. The proposed nonpiecewise model analytically describes the bulk and surface current mechanisms in JL CN FETs from the subthreshold region through the linear region to the saturation region without any fitting parameters. In addition, for each of these operation regions, the model reduces to simple expressions that explain the working principle of JL CN FETs. The model is compared with numerical simulations and shows good agreement.

Keywords

field effect transistors; nanoelectronics; nanowires; Pao-Sah integral; continuous charge model; long-channel junctionless cylindrical nanowire FET; nonpiecewise drain current model; numerical simulation; parabolic potential approximation; surface current mechanisms; Analytical models; FETs; Logic gates; Numerical models; Solid modeling; Bulk current; compact model; cylindrical nanowire (NW) FET; junctionless (JL) transistor; semiconductor device modeling; surface current;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2174770

Filename

6101551