1.5 mu m GaInAsP/InP distributed reflector (DR) lasers with SCH structure

Author

Arima, Isao ; Shim, Jong-In ; Arai, Shigehisa ; Morita, Itsuro ; Somchai, R. ; Suematsu, Yasuharu ; Komori, Kazuhiro

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

2

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

385

Lastpage

387

Abstract

The large differential quantum efficiency eta /sub df/ with one-directional output operation obtained in 1.5- mu m distributed reflector (DR) lasers using a thin active layer of 50 nm and the separate-confinement heterostructure (SCH) structure is discussed. eta /sub df/ of the DR laser was experimentally determined to be twice that of distributed-feedback (DFB) lasers cleaved from the same wafer, which indicates high efficiency and high power characteristics of DR lasers.<>

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.5 micron; 50 nm; GaInAsP-InP; differential quantum efficiency; distributed reflector lasers; distributed-feedback; high efficiency; high power characteristics; one-directional output operation; separate-confinement heterostructure; thin active layer; Distributed Bragg reflectors; Distributed feedback devices; Gratings; Indium phosphide; Laser feedback; Laser modes; Optical device fabrication; Power lasers; Quantum well lasers; Reflectivity;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.56594

Filename

56594