Title :
1.5 mu m GaInAsP/InP distributed reflector (DR) lasers with SCH structure
Author :
Arima, Isao ; Shim, Jong-In ; Arai, Shigehisa ; Morita, Itsuro ; Somchai, R. ; Suematsu, Yasuharu ; Komori, Kazuhiro
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
6/1/1990 12:00:00 AM
Abstract :
The large differential quantum efficiency eta /sub df/ with one-directional output operation obtained in 1.5- mu m distributed reflector (DR) lasers using a thin active layer of 50 nm and the separate-confinement heterostructure (SCH) structure is discussed. eta /sub df/ of the DR laser was experimentally determined to be twice that of distributed-feedback (DFB) lasers cleaved from the same wafer, which indicates high efficiency and high power characteristics of DR lasers.<>
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.5 micron; 50 nm; GaInAsP-InP; differential quantum efficiency; distributed reflector lasers; distributed-feedback; high efficiency; high power characteristics; one-directional output operation; separate-confinement heterostructure; thin active layer; Distributed Bragg reflectors; Distributed feedback devices; Gratings; Indium phosphide; Laser feedback; Laser modes; Optical device fabrication; Power lasers; Quantum well lasers; Reflectivity;
Journal_Title :
Photonics Technology Letters, IEEE
