Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD

Author

Sultan, S.M. ; Sun, K. ; Clark, O.D. ; Masaud, T.B. ; Fang, Q. ; Gunn, R. ; Partridge, J. ; Allen, M.W. ; Ashburn, P. ; Chong, H.M.H.

Author_Institution

Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK

Volume

33

Issue

2

fYear

2012

Firstpage

203

Lastpage

205

Abstract

Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO₂ pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3-18.6 μm, are then fabricated using these 80 nm × 40 nm nanowires. Measured electrical results show n-type enhancement behavior and a breakdown voltage ≥75 V at all channel lengths. This is the first report of high-voltage operation for ZnO nanowire FETs. Reproducible well-behaved electrical characteristics are obtained, and the drain current scales with 1/L, as expected for long-channel FETs. A respectable I_ON/I_OFF ratio of 2×10⁶ is obtained.

Keywords

II-VI semiconductors; atomic layer deposition; field effect transistors; nanowires; zinc compounds; ZnO; anisotropic dry etching; atomic layer deposition; breakdown voltage; electrical characteristics; n-type enhancement behavior; nanowire field-effect transistors; remote plasma ALD; top-down fabrication; top-down nanowire transistors; Electric variables; FETs; Fabrication; Nanoscale devices; Plasmas; Zinc oxide; Atomic layer deposition (ALD); ZnO; field-effect transistor (FET); nanowire; remote plasma; top-down fabrication;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2174607

Filename

6101555