DocumentCode
1396241
Title
Printed circuit board based memristor in adaptive lowpass filter
Author
Chew, Z.J. ; Li, Luoqing
Author_Institution
Multidiscipl. Nanotechnol. Centre, Swansea Univ., Swansea, UK
Volume
48
Issue
25
fYear
2012
Firstpage
1610
Lastpage
1611
Abstract
A new memristor based on zinc oxide (ZnO) nanowires grown on the copper layer of a printed circuit board has been fabricated showing similar characteristics as memristive metal/oxide/metal structures. This device is then used with a capacitor and an inductor to form a first-order and a second-order lowpass filter to demonstrate the adaptability of the memristor. The memristor reacts to different input voltage bias and changes its resistance accordingly. The gain, damping and Q-factor of the lowpass filters are observed to be varying with small input voltages.
Keywords
II-VI semiconductors; Q-factor; adaptive filters; capacitors; copper; inductors; low-pass filters; memristors; nanowires; printed circuits; semiconductor growth; wide band gap semiconductors; zinc compounds; Cu-ZnO-Cu; Q-factor; adaptive low-pass filter; capacitor; copper layer; first-order low-pass filter; inductor; memristive metal-oxide-metal structures; nanowires; printed circuit board based memristor; second-order low-pass filter;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2012.2918
Filename
6407247
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