DocumentCode :
1396242
Title :
A Novel Thermoelectric and Capacitive Power Sensor With Improved Dynamic Range Based on GaAs MMIC Technology
Author :
De Bo, Wang ; Ping, Liao Xiao ; Tong, Liu
Author_Institution :
Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China
Volume :
33
Issue :
2
fYear :
2012
Firstpage :
269
Lastpage :
271
Abstract :
A novel thermoelectric and capacitive power sensor with improved dynamic range based on GaAs monolithic microwave integrated circuit (MMIC) technology is proposed in this letter. This power sensor is designed and fabricated using GaAs MMIC process and MEMS technology. A MEMS cantilever beam is introduced and monolithically integrated as a capacitive power sensor to improve the overload capacity and the dynamic range at the cost of sensitivity. The measurement results verify the role of the MEMS cantilever beam. Another advantage of this power sensor consists in compatibility with MMIC devices and other planar connecting circuit structures with zero dc power consumption.
Keywords :
III-V semiconductors; MMIC; cantilevers; capacitive sensors; detector circuits; gallium arsenide; microsensors; thermoelectric devices; GaAs; MEMS cantilever beam; MEMS technology; MMIC technology; capacitive power sensor; monolithic microwave integrated circuit; planar connecting circuit; thermoelectric sensor; zero DC power consumption; Gallium arsenide; MMICs; Micromechanical devices; Microwave measurements; Semiconductor device measurement; Structural beams; Cantilever beam; GaAs monolithic microwave integrated circuit (MMIC); MEMS; thermoelectric power sensor;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2174610
Filename :
6101557
Link To Document :
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