DocumentCode
1396297
Title
An Intelligent Run-to-Run Control Strategy for Chemical–Mechanical Polishing Processes
Author
Chen, Chyi-Tsong ; Chuang, Yao-Chen
Author_Institution
Dept. of Chem. Eng., Feng Chia Univ., Taichung, Taiwan
Volume
23
Issue
1
fYear
2010
Firstpage
109
Lastpage
120
Abstract
This paper presents a novel intelligent run-to-run control strategy for chemical-mechanical polishing (CMP) processes. With the help of the recursive least squares identification method for model building, a real-coded genetic algorithm is applied to adaptively adjust the discount coefficients for double exponentially weighted moving average (EWMA) controller. The online intelligent scheme can effectively prevent the CMP processes from reaching unstable condition and can thus achieve high control performance. To demonstrate the effectiveness and applicability of the proposed intelligent run-to-run control strategy, two typical case studies are worked out in this paper. Extensive simulation comparisons with traditional double EWMA run-to-run control were performed. The simulation results show that the proposed intelligent run-to-run control is able to achieve better control performance than conventional schemes, especially for a process that has nonlinearities, process noise, and extra large metrology delays.
Keywords
chemical mechanical polishing; genetic algorithms; least squares approximations; moving average processes; semiconductor device manufacture; CMP process; chemical-mechanical polishing process; discount coefficients; double exponentially weighted moving average controller; genetic algorithm; intelligent run-to-run control; model building; recursive least squares identification; Chemical mechanical polishing (CMP) process; intelligent control; real-coded genetic algorithm; run-to-run control; system identification;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2009.2039186
Filename
5398968
Link To Document