• DocumentCode
    1396297
  • Title

    An Intelligent Run-to-Run Control Strategy for Chemical–Mechanical Polishing Processes

  • Author

    Chen, Chyi-Tsong ; Chuang, Yao-Chen

  • Author_Institution
    Dept. of Chem. Eng., Feng Chia Univ., Taichung, Taiwan
  • Volume
    23
  • Issue
    1
  • fYear
    2010
  • Firstpage
    109
  • Lastpage
    120
  • Abstract
    This paper presents a novel intelligent run-to-run control strategy for chemical-mechanical polishing (CMP) processes. With the help of the recursive least squares identification method for model building, a real-coded genetic algorithm is applied to adaptively adjust the discount coefficients for double exponentially weighted moving average (EWMA) controller. The online intelligent scheme can effectively prevent the CMP processes from reaching unstable condition and can thus achieve high control performance. To demonstrate the effectiveness and applicability of the proposed intelligent run-to-run control strategy, two typical case studies are worked out in this paper. Extensive simulation comparisons with traditional double EWMA run-to-run control were performed. The simulation results show that the proposed intelligent run-to-run control is able to achieve better control performance than conventional schemes, especially for a process that has nonlinearities, process noise, and extra large metrology delays.
  • Keywords
    chemical mechanical polishing; genetic algorithms; least squares approximations; moving average processes; semiconductor device manufacture; CMP process; chemical-mechanical polishing process; discount coefficients; double exponentially weighted moving average controller; genetic algorithm; intelligent run-to-run control; model building; recursive least squares identification; Chemical mechanical polishing (CMP) process; intelligent control; real-coded genetic algorithm; run-to-run control; system identification;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2009.2039186
  • Filename
    5398968