Addressing Dynamic Process Changes in High Volume Plasma Etch Manufacturing by Using Multivariate Process Control

Author

Parkinson, Blake R. ; Lee, Hyung ; Funk, Merritt ; Prager, Daniel ; Yamashita, Asao ; Sundararajan, Radha ; Edgar, Thomas F.

Author_Institution

TEL Technol. Center, Hopewell Junction, VA, USA

Volume

23

Issue

2

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

185

Lastpage

193

Abstract

Multivariate plasma etch modeling and control methodology are presented based on 65 and 45 nm gate production data utilizing wafer-to-wafer tool-level scatterometry. The selection of etch recipe variables for optimal control of wafer-to-wafer profile, within-wafer CD, and chamber-to-chamber CD is demonstrated and validated based on wafer-to-wafer, within wafer, and chamber matching experiments.

Keywords

optimal control; process control; sputter etching; chamber matching; chamber-to-chamber CD; control methodology; dynamic process changes; gate production data; high volume plasma etch manufacturing; multivariate plasma etch modeling; multivariate process control; optimal control; wafer-to-wafer profile; wafer-to-wafer tool-level scatterometry; within-wafer CD; Gate CD control; Niederlinski stability; integrated metrology; multivariable control; nonsquare relative gain array; plasma etch modeling; scatterometry; side wall angle control; wafer-to-wafer feedback;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2010.2041293

Filename

5398984