DocumentCode :
1396570
Title :
Bias considerations in d.c. transistor amplifiers
Author :
Hanel, R. ; Stampfl, R.A. ; Caruso, F.
Author_Institution :
National Aeronautics and Space Administration, Washington, USA
Volume :
106
Issue :
18
fYear :
1959
fDate :
5/1/1959 12:00:00 AM
Firstpage :
1365
Lastpage :
1372
Abstract :
General expressions for gain and thermal drift in a d.c. transistor amplifier are discussed. Variations of the transistor parameters due to temperature are shown, and permissible simplifications in the general expressions are introduced. A figure of merit¿termed drift/gain ratio¿is defined, which permits comparison of differentcircuits and transistors with respect to their thermal behaviour in d.c. amplifiers. It is shown that the desired condition is obtained whenthis ratio becomes a minimum, while a certain necessary gain, chosenby the designer, is maintained. Successively the common-collector, common-emitter and common-base configurations are analysed forsingle stages. Plots computed for particular transistor parametervalues aid the reader in arriving at an optimum design. Multi-stage amplifiers are discussed, using the drift/gain ratio toanalyse direct-coupled feedback amplifiers. After a detailed considerationof a 2- and 3-stage direct-coupled amplifier, experimentalverification of some of the results concludes the paper.
Keywords :
DC amplifiers; transistor circuits;
fLanguage :
English
Journal_Title :
Proceedings of the IEE - Part B: Electronic and Communication Engineering
Publisher :
iet
ISSN :
0369-8890
Type :
jour
DOI :
10.1049/pi-b-2.1959.0248
Filename :
5243884
Link To Document :
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